PN and PIN photodiodes proposed by HTDS are made with silicium and InGaAs. We propose a detection range from 220nm to 1700nm. Our solutions are available in a wide variety of packages to be adapted to your size and speed specifications. HTDS proposes optional versions with preamplifier and/or filters in order to adapt perfectly the solutions to your specifications. InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced High speed High responsivity Hermetically sealed Large area available High shunt resistance, low dark current
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