PN and PIN photodiodes proposed by HTDS are made with silicium and InGaAs. We propose a detection range from 220nm to 1700nm.
Our solutions are available in a wide variety of packages to be adapted to your size and speed specifications.
HTDS proposes optional versions with preamplifier and/or filters in order to adapt perfectly the solutions to your specifications.
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
Large area available
High shunt resistance, low dark current